Hardware
Documentation
D at a S h e e t
®
HAL 150y
Hall-Effect Switch with Open-Drain
Output (3-wire) in SOT23 Package
Edition June 15, 2016
DSH000179_002EN
HAL 150y
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document are believed to be accurate and
reliable. The software and proprietary information contained therein may be protected
by copyright, patent, trademark and/or other intellectual property rights of Micronas. All
rights not expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these
specifications.
By this publication, Micronas does not assume responsibility for patent infringements or
other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation.
Any information and data which may be provided in the document can and do vary in
different applications, and actual performance may vary over time.
All operating parameters must be validated for each customer application by customers’
technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s
content at any time without obligation to notify any person or entity of such revision or
changes. For further advice please contact us directly.
Do not use our products in life-supporting systems, military, aviation, or aerospace
applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could
create a situation where personal injury or death could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas.
Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names may be trademarks of their
respective companies.
Micronas
June 15, 2016; DSH000179_002EN
2
HAL 150y
DATA SHEET
Contents, continued
Page
Section
Title
4
5
1.
1.1.
Introduction
Features of HAL 150y
6
6
2.
2.1.
Ordering Information
Device-Specific Ordering Codes
8
9
9
10
3.
3.1.
3.1.1.
3.2.
Functional Description of HAL 150y
Functional Safety According to ISO 26262
Diagnostic Features
Power-On Self-Test
12
12
14
14
15
16
17
17
18
19
21
23
25
27
29
31
33
4.
4.1.
4.2.
4.3.
4.3.1.
4.4.
4.5.
4.6.
4.7.
4.8.
4.9.
4.10.
4.11.
4.12.
4.13.
4.14.
4.15.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Pin Connections (from Top Side, example HAL 1502) and Short Descriptions
Dimension and Position of Sensitive Area
Absolute Maximum Ratings
ESD and Latch-up
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
HAL 1501 Magnetic Characteristics
HAL 1502 Magnetic Characteristics
HAL 1503 Magnetic Characteristics
HAL 1506 Magnetic Characteristics
HAL 1507 Magnetic Characteristics
HAL 1508 Magnetic Characteristics
HAL 1509 Magnetic Characteristics
35
35
36
37
38
38
5.
5.1.
5.1.1.
5.2.
5.3.
5.4.
Application Notes
Application Circuits
ESD System Level Application Circuit (ISO10605-2008)
Ambient Temperature
Start-Up Behavior
EMC and ESD
39
6.
Data Sheet History
Micronas
June 15, 2016; DSH000179_002EN
3
HAL 150y
DATA SHEET
Hall-Effect Switch with Open-Drain Output (3-wire) in SOT23 Package
Release Note: Revision bars indicate significant changes to the previous edition.
1. Introduction
The HAL 150y Hall-switch family members produced in CMOS technology as 3-wire
device with open-drain output transistor include a temperature-compensated Hall plate
with active offset compensation, a comparator, and an output stage.
The comparator compares the actual magnetic flux through the Hall plate (Hall voltage)
with the fixed reference values (switching points). Accordingly the output transistor is
switched on or off.
The active offset compensation leads to constant magnetic characteristics over supply
voltage and temperature range. In addition, the magnetic parameters are robust against
mechanical stress effects.
The sensor is designed for industrial and automotive applications and operates with
supply voltages from 2.7 V to 24 V in the junction temperature range from 40 C up to
170 C.
HAL 150y is available in a JEDEC TO236-compliant SMD-package 3-lead SOT23.
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
1.1. Features of HAL 150y
– SOT23-3L JEDEC TO236-compliant package
– ISO 26262 compliant as ASIL A ready device
– Short-circuit protected open-drain output and thermal shutdown
– Low current consumption of typ. 1.6 mA
– Operates with supply voltages from 2.7 V to 24 V
– Overvoltage protection capability up to 40 V
– Reverse-voltage protected VSUP-pin (18 V)
– High ESD performance of ±8 kV (HBM)
– Diagnostic features: power-on self test
– Sample frequency of 500 kHz, 2 µs output refresh time
– Operates with static and dynamic magnetic fields up to 12 kHz
– High resistance to mechanical stress by active offset compensation
– Constant switching points over a wide supply voltage and temperature range
– Wide junction temperature range from 40 °C to 170 °C
– Built-in temperature coefficient
– Optimized for applications in extreme automotive and industrial environments
– Qualified according to AEC-Q100 test standard for automotive electronics industry to
provide high-quality performance
– Robust EMC performance, corresponding to different standards, such as ISO 7637,
ISO 16750, IEC 61967, ISO 11452, and ISO 62132
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
2. Ordering Information
A Micronas device is available in a variety of delivery forms. They are distinguished by a
specific ordering code:
XXX NNNN PA-T-C-P-Q-SP
Further Code Elements
Temperature Range
Package
Product Type
Product Group
Fig. 2–1: Ordering Code Principle
For detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging,
Handling”.
2.1. Device-Specific Ordering Codes
HAL 150y is available in the following package and temperature range.
Table 2–1: Available packages
Package Code (PA)
Package Type
SU
SOT23
Table 2–2: Available temperature ranges
Temperature Code (T)
Temperature Range
A
TJ = 40 °C to +170 °C
The relationship between ambient temperature (TA) and junction temperature (TJ) is
explained in Section 5.2. on page 37.
For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special
Procedure (SP) please contact Micronas.
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Table 2–3: Available ordering codes and corresponding package marking
Available Ordering Codes
Package Marking
HAL1501SU-A-[C-P-Q-SP]
1501
HAL1502SU-A-[C-P-Q-SP]
1502
HAL1503SU-A-[C-P-Q-SP]
1503
HAL1506SU-A-[C-P-Q-SP]
1506
HAL1507SU-A-[C-P-Q-SP]
1507
HAL1508SU-A-[C-P-Q-SP]
1508
HAL1509SU-A-[C-P-Q-SP]
1509
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June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
3. Functional Description of HAL 150y
The HAL 150y sensors are monolithic integrated circuits which switch in response to
magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is
applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this
field. The Hall voltage is compared with the actual threshold level in the comparator. If
the magnetic field exceeds the threshold levels, the output stage is switched to the
appropriate state.
The built-in hysteresis eliminates oscillation and provides switching behavior of the output without bouncing.
Offsets caused by mechanical stress are compensated by using the “switching offset
compensation technique”.
A diode on the supply line is not required thanks to the built-in reverse voltage protection.
The open drain output is forced to a safe, High-Z (high-impedance) state, in any of the
following fault conditions: overtemperature, undervoltage and functional safety related
diagnoses (see Section 3.1.). In addition, the output current is limited (short-circuit protection).
The device is able to withstand a maximum supply voltage of 24 V for unlimited time
and features overvoltage capability (40 V load dump).
VSUP
Reverse
Voltage &
ESD
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Short Circuit
Overtemperature
ESD Protection
Comparator
Output
Filter
OUT
Functional
Safety
Features
GND
Fig. 3–1: HAL 150y block diagram
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June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
3.1. Functional Safety According to ISO 26262
The HAL 150y is ISO 26262 compliant as an ASIL A ready device.
Magnetic and switching performance is defined as a hardware safety requirement.
The safe state is defined as High-Z output.
3.1.1. Diagnostic Features
Internal states are monitored and in an error condition flagged with a High-Z at the output:
– Internal voltage regulator: under and over voltage detection
– Monitoring of internal bias and current levels
– Monitoring of the internal reference voltage
– Monitoring of the Hall plate voltage
Note
Micronas
For further documentation regarding functional safety please contact
Micronas.
June 15, 2016; DSH000179_002EN
9
HAL 150y
DATA SHEET
3.2. Power-On Self-Test
The power-on self-test allows the customer to execute a functional check of the device,
as well as to detect wire breaks as long as the host controls the power supply of the
device.
The self-test can be enabled only once after power-on.
In order to start the test, the host has to power off the sensor and to pull down its output
pin. Afterwards, the host needs to power on the sensor again (sensor in High-Z mode,
after waking up) and then to release its output pin. This order of events is the criteria for
the sensor to start the power-on self-test.
After releasing the output pin, the sensor simulates a magnetic field for a pre-defined
period of time (see first observation window in Fig. 3–2), driving the sensor’s output to
low level, detected by the host.
Subsequently, the sensor simulates an opposite magnetic field during the second
observation window (see Fig. 3–2), driving the sensor’s output to high level, also
detected by the host. The described self-test behavior is not impacted by external magnetic fields up to about 300 mT.
After self-test completion, the sensor always returns to normal operation regardless of
the test result.
By positioning the pull-up resistor close to the control unit, wire breaks at all pins VSUP,
OUT, and GND can be detected.
It is also possible to enable the power-on self-test in application systems, consisting of
several HAL 150y sensors, as long, as the output pins are not connected to each other.
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
VSUP
tstrtno
VSUPsens
tflxn
tstrtn
tflxp
0V
tstrtp
Host driver
Sensor driver
VIO
Host sampling
First window
Second window
Fig. 3–2: Self-test timing diagram
Host
Sensor
VSUPsens
VSUP
SUPOUT
VSUP
Cp
RL
OUT
VIO
I/O
GND
GND
Fig. 3–3: External circuit diagram with switchable supply
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
4. Specifications
4.1. Outline Dimensions
D
A
H
x
Bd
B
Center of sensitive area
3
c
B
(L1)
L
E
E1
y
B
1
2
3x b
0
e
0.25
BASE METAL
A3
SECTION "B-B"
0.10 C 3x
c
c1
A2
A
A4
GAUGE PLANE
e1
b1
b
SEATING PLANE
A1
WITH PLATING
C
0
physical dimensions do not include moldflash.
1.25
2.5mm
scale
A4, Bd, x, y= these dimensions are different for each sensor type and are specified in the data
sheet.
UNIT
A
A1
A2
A3
b
b1
c
c1
D
E
E1
e
e1
L
L1
0
mm
1.10
max.
0.05
0.10
0.88
1.02
0.5
0.3
0.48
0.3
0.45
0.1
0.18
0.1
0.15
2.8
3.0
2.1
2.5
1.2
1.4
0.95
1.9
0.4
0.6
0.55
0°
8°
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
TO-236
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
13-05-10
06902.0001.4
ZG001101_Ver.01
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–1:
SOT23: Plastic Small Outline Transistor package, 3 leads
Ordering code: SU
Weight approximately 0.01094 g
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
user direction of feed
Ø
10
2
18.2 max
Ø330
3
Ø1
12 min
Devices per Reel: 10 000
IEC STANDARD
ANSI
ISSUE
ITEM NO.
4th
60286-3
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
15-09-23
06839.0001.4
ZG002042_001_01
© Copyright 2012 Micronas GmbH, all rights reserved
Fig. 4–2:
SOT23: Tape & Reel Finishing
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is
included in the document “Guidelines for the Assembly of Micronas Packages”.
It is available on the Micronas website (http://www.micronas.com/en/service-center/
downloads) or on the service portal (http://service.micronas.com).
4.3. Pin Connections (from Top Side, example HAL 1502) and Short
Descriptions
GND
3
1502
1
2
VSUP
OUT
1
VSUP
2
OUT
3
GND
Fig. 4–3: Pin configuration
Table 4–1: Pin assignment.
Pin number
Name
Function
1
VSUP
Supply voltage
2
OUT
Output
3
GND
Ground
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HAL 150y
DATA SHEET
4.3.1. Dimension and Position of Sensitive Area
Parameter
Min.
Dimension of sensitive area
A4 (denotes the distance of die to top package
surface in Z-direction)
Typ.
Max.
Unit
100 x 100
µm2
0.24
0.27
0.37
mm
x (denotes the nominal distance of the center of the
Bd circle to the package border in x-direction)
1.45
mm
y (denotes the nominal distance of the center of the
Bd circle to the package border in y-direction)
0.65
mm
Bd (denotes the diameter of the circuit in which the
center of the sensitive area is located)
Micronas
June 15, 2016; DSH000179_002EN
0.23
mm
15
HAL 150y
DATA SHEET
4.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only. Functional operation of the device at
these conditions is not implied. Exposure to absolute maximum rating conditions for
extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to
high static voltages or electric fields; however, it is advised that normal precautions be
taken to avoid application of any voltage higher than absolute maximum-rated voltages
to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No
Min.
Max.
Unit
Conditions
TJ
Junction temperature
range A
40
190
°C
t < 96 h1)
VSUP
Supply voltage
1
18
28
V
t < 96 h1)
32
V
t < 5 min1)
40
V
t < 10 x 400 ms
“Load-Dump”1)
with series resistor
RV > 100 .
t < 96 h1)
VOUT
Output voltage
2
0.5
28
V
IO
Output current
2
65
mA
IOR
Reverse output current
2
50
1)
mA
No cumulative stress
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HAL 150y
DATA SHEET
4.5. ESD and Latch-up
The output pin has to be in High-Z for ESD measurements.
Table 4–2: ESD and latch-up
Symbol
Parameter
Min.
Max.
Unit
Ilatch
Maximum latch-up free current at any pin (measurement according to AEC Q100-004), class 1
100
100
mA
VHBM
Human body model (according to AEC Q100-002)
8
8
kV
VCDM
Charged device model (according to AEC Q100-011)
1
1
kV
VSYSTEM_LEVEL
Unpowered Gun Test (150 pF / 330 or 330 pF / 2 k)
according to ISO 10605-20081)
15
15
kV
1)only
valid with ESD System Level Application Circuit (see Fig. 5–2 on page 34)
4.6. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the
document “Guidelines for the Assembly of Micronas Packages”. It gives
recommendations linked to moisture sensitivity level and long-term storage.
It is available on the Micronas website (http://www.micronas.com/en/service-center/
downloads) or on the service portal (http://service.micronas.com).
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior
of the device, and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin
No
Min.
VSUP
Supply voltage
1
2.7
1
40
VSUP / t Power-down slope1)
Typ.
Max.
Unit
24
V
0.1
V/µs
VSUP below 2.7 V
170
150
125
°C
t < 1000 h3)
t < 2500 h3)
t < 8000 h3)
TJ
Junction temperature
range A 2)
VOUT
Output voltage
2
24
V
IOUT
Output current
2
25
mA
Conditions
1)
This parameter is relevant for ISO26262 applications: In order to ensure the defined output
state (High-Z) during power-up in the range below the recommended supply voltage, the
preceding power down slope is required to be slower than the maximum VSUP / t value.
2)
Depends on the temperature profile of the application. Please contact Micronas for life time
calculations.
3)
No cumulative stress
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
4.8. Characteristics
at TJ = 40 C to +170 C, VSUP = 2.7 V to 24 V,
at Recommended Operating Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 C and VSUP = 12 V
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Conditions
ISUP
Supply current
1
1.1
1.6
2.4
mA
ISUPR
Reverse current
1
1
mA
for VSUP = -18 V
0.4
V
IO = 20 mA
0.5
V
IO = 25 mA
10
µA
Supply
Port Output
Vol
Port low output voltage
2
0.13
Ioleak
Output leakage current
tf
Output fall time1)
1
µs
tr
Output rise time1)
1
µs
Bnoise
Effective noise of magnetic switching points
(RMS)2)
72
tj
Output jitter (RMS)1)
0.58
td
Delay time2) 3)
tsamp
Output refresh period2)
ten
Enable time of output
after settling of VSUP 4)
1)
2)
3)
4)
0.1
1.6
VSUP = 12 V;
RL = 820 ;
CL = 20 pF
µT
For square wave signal with 12 kHz
0.72
µs
For square wave signal with 1 kHz. Jitter
is evenly distributed
between 1 µs and
+1 µs
16
21
µs
2.2
3.0
µs
50
60
µs
VSUP = 12 V
B > Bon + 2 mT or
B < Boff - 2 mT
Not tested, characterized only
Guaranteed by design
Systematic delay between magnetic threshold reached and output switching
If power-on self-test is executed, ten will be extended by power-on self-test period (see Section )
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Conditions
Power-on Self-Test
tdsamp
Double sample period2)
3.2
4.4
6.0
µs
tstrtp
Start of first sampling
window2)
4
tdsamp
tflxp
End of first sampling
window2)
9
tdsamp
tstrtn
Start of second sampling window2)
10
tdsamp
tflxn
End of second sampling window2)
31
tdsamp
tstrtno
Start of first normal
operation value2)
36.5
37
tdsamp
Thermal Resistance
junction to air
300
K/W
Measured with a
1s0p board
250
K/W
Measured with a
1s1p board
210
K/W
Measured with a
2s2p board
30
K/W
Measured with a
1s0p board
50
K/W
Measured with a
1s1p board
40
K/W
Measured with a
2s2p board
Package
Rthja
Rthjc
2)
Thermal Resistance
junction to case
Guaranteed by design
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
4.9. HAL 1501 Magnetic Characteristics
The HAL 1501 bipolar Hall-switch provides highest sensitivity (see Fig. 4–4 on
page 21).
The output turns low with the magnetic south pole on the top side of the package and
turns high with the magnetic north pole on the top side. The output state is not defined if
the magnetic field is removed again.
For correct functioning in the application, the sensor requires both magnetic polarities
(north and south) on the top side of the package.
Magnetic Features:
– switching type: bipolar
– very high sensitivity
– typical BON: 0.4 mT at room temperature
– typical BOFF: 0.4 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 0 ppm/K at room temperature
Applications
The HAL 1501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as:
– applications with large air gap or weak magnets
– revolutions per minute (RPM) or other counting measurement, e.g. window lifter and
sunroof
– commutation of brushless DC motors
– position detection, such as for gear-shift lever and electric parking brake
– magnetic encoders
Output Voltage
High-Z
BHYS
Low-Z
BOFF
0
BON
B
Fig. 4–4: Definition of magnetic switching points for the HAL 1501
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June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
-0.6
0.5
1.6
-1.6
-0.5
0.6
1.0
mT
25 C
-0.5
0.4
1.5
-1.5
0.4
0.5
0.8
mT
170 C
-1
0.35
2
-2
-0.35
1
0.7
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
22
HAL 150y
DATA SHEET
4.10.HAL 1502 Magnetic Characteristics
The HAL 1502 Hall-latch provides highest sensitivity (see Fig. 4–5 on page 24).
The output turns low with the magnetic south pole on the top side of the package and
turns high with the magnetic north pole on the top side. The output does not change if
the magnetic field is removed. For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor requires both magnetic polarities
(north and south) on the top side of the package.
Magnetic Features:
– switching type: latching
– high sensitivity
– typical BON: 2.5 mT at room temperature
– typical BOFF: 2.5 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K at room
temperature
Applications
The HAL 1502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as:
– applications with large air gap or weak magnets
– revolutions per minute (RPM) or other counting measurement, e.g. window lifter and
sunroof
– commutation of brushless DC motors
– position detection, such as for adaptive front lighting and electric parking brake
– magnetic encoders
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Output Voltage
High-Z
BHYS
Low-Z
BOFF
0
B
BON
Fig. 4–5: Definition of magnetic switching points for the HAL 1502
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
1.3
2.8
4.3
4.3
2.8
1.3
5.6
mT
25 C
1
2.5
4
4
2.5
1
5
mT
170 C
0.8
2.3
3.8
3.8
2.3
0.8
4.6
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
24
HAL 150y
DATA SHEET
4.11.HAL 1503 Magnetic Characteristics
The HAL 1503 unipolar Hall-switch provides high sensitivity (see Fig. 4–6 on page 25).
The output turns low with the magnetic south pole on the top side of the package and
turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– high sensitivity
– typical BON: 5.5 mT at room temperature
– typical BOFF: 3.7 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K at room
temperature
Applications
The HAL 1503 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position, such as:
– clutch position detection
– electric parking brake
– brake light switch
– brake pedal position detection
– steering wheel lock
– door handle
Output Voltage
High-Z
BHYS
Low-Z
0
BOFF
BON
B
Fig. 4–6: Definition of magnetic switching points for the HAL 1503
Micronas
June 15, 2016; DSH000179_002EN
25
HAL 150y
DATA SHEET
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
4.4
6.1
7.6
2.4
4
5.7
2.1
mT
25 C
3.8
5.5
7.1
2.1
3.7
5.5
1.8
mT
170 C
3
5
6.7
1.8
3.6
5.5
1.4
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
26
HAL 150y
DATA SHEET
4.12.HAL 1506 Magnetic Characteristics
The HAL 1506 unipolar Hall-switch provides medium sensitivity (see Fig. 4–7 on
page 27).
The output turns low with the magnetic south pole on the top side of the package and
turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– medium sensitivity
– typical BON: 18.9 mT at room temperature
– typical BOFF: 17.3 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1200 ppm/K at room
temperature
Applications
The HAL 1506 is the optimal sensor for applications with one magnetic polarity, such
as:
– clutch pedal position
– wiper position
– door lock
– trunk lock
Output Voltage
High-Z
BHYS
Low-Z
0
BOFF
BON
B
Fig. 4–7: Definition of magnetic switching points for the HAL 1506
Micronas
June 15, 2016; DSH000179_002EN
27
HAL 150y
DATA SHEET
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
16.5
20.8
24.8
14
18.9
22.5
-
1.9
-
mT
25 C
15.4
18.9
22.6
13.8
17.3
21
-
1.6
-
mT
170 C
13
17
19.5
11.8
15.8
18.2
-
1.2
-
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
28
HAL 150y
DATA SHEET
4.13.HAL 1507 Magnetic Characteristics
The HAL 1507 unipolar Hall-switch provides low sensitivity (see Fig. 4–8 on page 30).
The output turns low with the magnetic south pole on the top side of the package and
turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– low sensitivity
– typical BON: 28.2 mT at room temperature
– typical BOFF: 23.9 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 300 ppm/K at room
temperature
Applications
The HAL 1507 is the optimal sensor for applications with one magnetic polarity and
strong magnetic fields at the sensor position, such as:
– gear position detection
– rooftop open/close
– sliding door
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Output Voltage
High-Z
BHYS
Low-Z
0
BOFF
BON
B
Fig. 4–8: Definition of magnetic switching points for the HAL 1507
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
24
29.5
35
18.7
24.7
30.7
4.8
mT
25 C
23.7
28.2
32.7
19
23.9
28.8
4.3
mT
170 C
22.5
27.7
32.9
18.6
23.9
29.2
3.8
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
30
HAL 150y
DATA SHEET
4.14.HAL 1508 Magnetic Characteristics
The HAL 1508 a high-sensitive unipolar switch sensor only sensitive to the magnetic
north polarity (see Fig. 4–9 on page 32).
The output turns low with the magnetic north pole on the top side of the package and
turns high if the magnetic field is removed. The sensor does not respond to the magnetic south pole.
For correct functioning in the application, the sensor requires only the magnetic north
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– high sensitivity
– typical BON: 5.5 mT at room temperature
– typical BOFF: 3.7 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K at room
temperature
Applications
The HAL 1508 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position. In combination with HAL 1503 it is
often used for clutch pedal position detection, for instance. Other examples are:
– electric parking brake
– wiper position
– door lock
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Output Voltage
High-Z
BHYS
Low-Z
BON
BOFF
0
B
Fig. 4–9: Definition of magnetic switching points for the HAL 150y
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
7.6
6.1
4.4
5.7
4
2.4
2.1
mT
25 C
7.1
5.5
3.8
5.5
3.7
2.1
1.8
mT
170 C
6.7
5
3
5.5
3.6
1.8
1.4
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
32
HAL 150y
DATA SHEET
4.15.HAL 1509 Magnetic Characteristics
The HAL 1509 unipolar inverted Hall-switch provides high sensitivity (see Fig. 4–10 on
page 34).
The output turns high with the magnetic south pole on the top side of the package and
turns low if the magnetic field is removed. The sensor does not respond to the magnetic
north pole on the top side of the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar inverted
– high sensitivity
– typical BON: 3.7 mT at room temperature
– typical BOFF: 5.5 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K at room
temperature
Applications
The HAL 1509 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position where an inverted output signal is
required, such as:
– electric valve actuation
– door lock
– brake position detection
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
Output Voltage
High-Z
BHYS
Low-Z
0
BON
BOFF
B
Fig. 4–10: Definition of magnetic switching points for the HAL 1509
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 2.7 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40 C
2.4
4
5.7
4.4
6.1
7.6
2.1
mT
25 C
2.1
3.7
5.5
3.8
5.5
7.1
1.8
mT
170 C
1.8
3.6
5.5
3
5
6.7
1.4
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Micronas
Regarding switching points, temperature coefficients, and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact Micronas.
June 15, 2016; DSH000179_002EN
34
HAL 150y
DATA SHEET
5. Application Notes
5.1. Application Circuits
For applications with disturbances on the supply line or radiated disturbances, a series
resistor RV and two capacitors CP and CL all placed close to the sensor are recommended (see Fig. 5–1).
For example: RV =100 CP = 10 nF, and CL = 4.7 nF.
VSUP
RV
RL
OUT
CP
CL
GND
GND
Fig. 5–1: Example for a recommended application circuit
RL is the open-drain pull-up resistor and has to be placed close to the input of the host
controller to enable wire-break detection.
Micronas
June 15, 2016; DSH000179_002EN
35
HAL 150y
DATA SHEET
5.1.1. ESD System Level Application Circuit (ISO10605-2008)
For an ESD system level application circuit according to ISO10605-2008 a 100 nF
capacitor at VSUP and an additional TVS diode at OUT are necessary.
VSUP
RV =100 1)
RL
OUT
CP = 100 nF
TVS Diode
24 V
GND
1)
required for 40 V load dump capability
Fig. 5–2: Application circuit with external resistor
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
5.2. Ambient Temperature
Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA).
T J = T A + T
Under static conditions and continuous operation, the following equation applies:
T = I SUP V SUP R thja + I OUT V OUT R thja
For all sensors, the junction temperature range TJ is specified. The maximum ambient
temperature TAmax can be calculated as:
T Amax = T Jmax – T
For typical values, use the typical parameters. For worst case calculation, use the max.
parameters for ISUP , IOUT , and Rthja, and the max. value for VOUT and VSUP from the
application.
Micronas
June 15, 2016; DSH000179_002EN
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HAL 150y
DATA SHEET
5.3. Start-Up Behavior
The sensors have an initialization time (enable time ten) after applying the supply voltage. The parameter ten is specified in the Electrical Characteristics (see page 19).
During the initialization time, the output state is defined as High-Z.
After ten, the output will be Low-Z if the applied magnetic field B is above BON. The output will be High-Z if B is below BOFF. In case of sensors with an inverted switching
behavior, the output state will be high if B > BOFF and low if B < BON.
Note
For non-inverting ICs and magnetic fields between BOFF and BON after
applying VSUP , the output state of the device will be High-Z.
For inverting and north-pole sensitive ICs and magnetic fields between
BOFF and BON after applying VSUP , the output state of the device will be
Low-Z.
For further information see Application Notes for HAL 15xy.
5.4. EMC and ESD
For applications with disturbances on the supply line or radiated disturbances, a series
resistor and a capacitor are recommended. The series resistor and the capacitor should
be placed as close as possible to the HAL sensor.
Special application arrangements were evaluated to pass EMC tests according to different standards, such as ISO 7637, ISO 16750, IEC 61967, ISO 11452 and ISO 62132.
Micronas
June 15, 2016; DSH000179_002EN
38
HAL 150y
DATA SHEET
6. Data Sheet History
1. Data Sheet: “HAL 150y, Hall-Effect Switch with Open-Drain Output (3-wire) in SOT23 Package”,
March 23, 2016; DSH000179_001EN. First release of the Data Sheet.
2. Data Sheet: “HAL 150y, Hall-Effect Switch with Open-Drain Output (3-wire) in SOT23 Package”,
June 15, 2016; DSH000179_002EN. Second release of the Data Sheet.
Major changes:
– ESD and Latch-up: Values updated
– ESD System Level Application Circuit (ISO10605-2008) added
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
Micronas
June 15, 2016; DSH000179_002EN
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